型号:

SI5935CDC-T1-GE3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET P-CH 20V 1206-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
SI5935CDC-T1-GE3 PDF
标准包装 3,000
系列 TrenchFET®
FET 型 2 个 P 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 4A
开态Rds(最大)@ Id, Vgs @ 25° C 100 毫欧 @ 3.1A,4.5V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 11nC @ 5V
输入电容 (Ciss) @ Vds 455pF @ 10V
功率 - 最大 3.1W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 1206-8 ChipFET?
包装 带卷 (TR)
其它名称 SI5935CDC-T1-GE3TR
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